IRFD120

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~175°C TJ

Current Rating :

1.3A

Vgs(th) (Max) @ Id :

4V @ 250µA

Row Spacing :

7.62 mm

Max Operating Temperature :

175°C

RoHS Status :

Non-RoHS Compliant

Continuous Drain Current (ID) :

1.3A

Power Dissipation-Max :

1.3W Ta

Lead Pitch :

2.54mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mount :

Through Hole

Drain to Source Resistance :

270mOhm

Input Capacitance :

360pF

Termination :

Through Hole

Rise Time :

27ns

FET Type :

N-Channel

Package / Case :

4-DIP (0.300, 7.62mm)

Number of Pins :

4

Drain to Source Breakdown Voltage :

100V

Current - Continuous Drain (Id) @ 25°C :

1.3A Ta

Input Capacitance (Ciss) (Max) @ Vds :

360pF @ 25V

Turn On Delay Time :

6.8 ns

Turn-Off Delay Time :

18 ns

Gate Charge (Qg) (Max) @ Vgs :

16nC @ 10V

Gate to Source Voltage (Vgs) :

20V

Published :

2015

Rds On (Max) @ Id, Vgs :

270mOhm @ 780mA, 10V

Packaging :

Tube

Power Dissipation :

1.3W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On Max :

270 mΩ

Mounting Type :

Through Hole

Drain to Source Voltage (Vdss) :

100V

Vgs (Max) :

±20V

Radiation Hardening :

No

Number of Elements :

1

Supplier Device Package :

4-DIP, Hexdip, HVMDIP

Min Operating Temperature :

-55°C

Fall Time (Typ) :

27 ns