IRFD024PBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Pins :

4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

1.3W Ta

REACH SVHC :

Unknown

Rds On Max :

100 mΩ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±20V

Rise Time :

58ns

Drain to Source Voltage (Vdss) :

60V

Supplier Device Package :

4-DIP, Hexdip, HVMDIP

Current - Continuous Drain (Id) @ 25°C :

2.5A Ta

Published :

2014

Number of Elements :

1

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

60V

Max Operating Temperature :

175°C

Rds On (Max) @ Id, Vgs :

100mOhm @ 1.5A, 10V

Drain to Source Resistance :

100MOhm

Element Configuration :

Single

Threshold Voltage :

4V

Input Capacitance :

640pF

Voltage - Rated DC :

60V

Package / Case :

4-DIP (0.300, 7.62mm)

Factory Lead Time :

8 Weeks

Lead Free :

Lead Free

Resistance :

100MOhm

Mounting Type :

Through Hole

Mount :

Through Hole

RoHS Status :

ROHS3 Compliant

Min Operating Temperature :

-55°C

Packaging :

Tube

Operating Temperature :

-55°C~175°C TJ

Fall Time (Typ) :

58 ns

Input Capacitance (Ciss) (Max) @ Vds :

640pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Current Rating :

2.5A

Gate to Source Voltage (Vgs) :

20V

Turn-Off Delay Time :

25 ns

Power Dissipation :

1.3W

Width :

6.29mm

FET Type :

N-Channel

Recovery Time :

180 ns

Height :

3.37mm

Turn On Delay Time :

13 ns

Length :

5mm

Continuous Drain Current (ID) :

2.5A