IRFD113

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

200pF @ 25V

Reach Compliance Code :

Unknown

Operating Temperature :

-55°C~150°C TJ

DS Breakdown Voltage-Min :

80V

Mounting Type :

Through Hole

Case Connection :

DRAIN

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

7nC @ 10V

Number of Elements :

1

Terminal Finish :

TIN LEAD

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

4-DIP (0.300, 7.62mm)

Surface Mount :

No

Current - Continuous Drain (Id) @ 25°C :

800mA Tc

Power Dissipation-Max :

1W Tc

Transistor Element Material :

SILICON

Packaging :

Tube

Drain to Source Voltage (Vdss) :

60V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-30 Code :

R-PDIP-T3

Pbfree Code :

No

Vgs (Max) :

±20V

Drain-source On Resistance-Max :

0.8Ohm

Terminal Position :

Dual

RoHS Status :

Non-RoHS Compliant

Drain Current-Max (Abs) (ID) :

0.8A

Rds On (Max) @ Id, Vgs :

800m Ω @ 800mA, 10V

FET Type :

N-Channel

JESD-609 Code :

e0

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

COMMERCIAL

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE