IRFD110

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

Package / Case :

4-DIP (0.300, 7.62mm)

Published :

2015

Continuous Drain Current (ID) :

1A

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain to Source Breakdown Voltage :

100V

Resistance :

540mOhm

Contact Plating :

Lead, Tin

Operating Temperature :

-55°C~175°C TJ

Mounting Type :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

1A Ta

Input Capacitance :

180pF

Power Dissipation :

1.3W

Turn On Delay Time :

6.9 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Operating Temperature :

175°C

Gate Charge (Qg) (Max) @ Vgs :

8.3nC @ 10V

Drain to Source Voltage (Vdss) :

100V

Voltage - Rated DC :

100V

Rise Time :

16ns

Vgs (Max) :

±20V

Number of Elements :

1

Current Rating :

1A

FET Type :

N-Channel

Rds On Max :

540 mΩ

Mount :

Through Hole

Turn-Off Delay Time :

15 ns

Min Operating Temperature :

-55°C

Rds On (Max) @ Id, Vgs :

540mOhm @ 600mA, 10V

Supplier Device Package :

4-DIP, Hexdip, HVMDIP

Number of Pins :

4

Power Dissipation-Max :

1.3W Ta

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Resistance :

540mOhm

Lead Free :

Contains Lead

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

180pF @ 25V

Fall Time (Typ) :

16 ns

RoHS Status :

Non-RoHS Compliant

Packaging :

Tube