IRFDC20

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Max Operating Temperature :

150°C

Current - Continuous Drain (Id) @ 25°C :

320mA Ta

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

600V

Rds On (Max) @ Id, Vgs :

4.4Ohm @ 190mA, 10V

Radiation Hardening :

No

Drain to Source Resistance :

4.4Ohm

Voltage - Rated DC :

600V

Power Dissipation :

1.3W

Current Rating :

320mA

Turn-Off Delay Time :

30 ns

Number of Channels :

1

Mount :

Through Hole

Number of Pins :

4

Lead Free :

Contains Lead

Supplier Device Package :

4-DIP, Hexdip, HVMDIP

Package / Case :

4-DIP (0.300, 7.62mm)

Fall Time (Typ) :

23 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2017

Operating Temperature :

-55°C~150°C TJ

Drain to Source Breakdown Voltage :

600V

RoHS Status :

Non-RoHS Compliant

Rise Time :

23ns

Input Capacitance :

350pF

Input Capacitance (Ciss) (Max) @ Vds :

350pF @ 25V

Mounting Type :

Through Hole

Continuous Drain Current (ID) :

320mA

Power Dissipation-Max :

1W Ta

Width :

6.29mm

Vgs(th) (Max) @ Id :

4V @ 250µA

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

Gate to Source Voltage (Vgs) :

20V

Packaging :

Tube

Rds On Max :

4.4 Ω

Length :

5mm

Turn On Delay Time :

10 ns

Min Operating Temperature :

-55°C

Height :

3.37mm