IRFD9220PBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Lead Free

Mount :

Through Hole

Input Capacitance :

340pF

Turn On Delay Time :

8.8 ns

Rise Time :

27ns

Packaging :

Tube

RoHS Status :

ROHS3 Compliant

Length :

6.29mm

Width :

5mm

Operating Temperature :

-55°C~150°C TJ

Package / Case :

4-DIP (0.300, 7.62mm)

Drain to Source Breakdown Voltage :

200V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Resistance :

1.5Ohm

Number of Elements :

1

Height :

3.37mm

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

-560mA

Factory Lead Time :

8 Weeks

Drain to Source Voltage (Vdss) :

200V

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Supplier Device Package :

4-DIP, Hexdip, HVMDIP

REACH SVHC :

Unknown

FET Type :

P-Channel

Radiation Hardening :

No

Vgs (Max) :

±20V

Rds On Max :

1.5 Ω

Threshold Voltage :

-4V

Voltage - Rated DC :

-200V

Element Configuration :

Single

Current Rating :

-560mA

Number of Pins :

4

Turn-Off Delay Time :

7.3 ns

Min Operating Temperature :

-55°C

Vgs(th) (Max) @ Id :

4V @ 250µA

Resistance :

1.5Ohm

Power Dissipation :

1W

Current - Continuous Drain (Id) @ 25°C :

560mA Ta

Max Operating Temperature :

150°C

Rds On (Max) @ Id, Vgs :

1.5Ohm @ 340mA, 10V

Input Capacitance (Ciss) (Max) @ Vds :

340pF @ 25V

Published :

2008

Power Dissipation-Max :

1W Ta

Fall Time (Typ) :

19 ns

Gate to Source Voltage (Vgs) :

20V