IRFD9220

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Fall Time (Typ) :

27 ns

Gate to Source Voltage (Vgs) :

20V

Height :

3.37mm

Current - Continuous Drain (Id) @ 25°C :

560mA Ta

Mount :

Through Hole

Drain to Source Breakdown Voltage :

-200V

Power Dissipation-Max :

1W Ta

RoHS Status :

Non-RoHS Compliant

Supplier Device Package :

4-DIP, Hexdip, HVMDIP

Packaging :

Tube

Turn On Delay Time :

8.8 ns

Min Operating Temperature :

-55°C

Drain to Source Voltage (Vdss) :

200V

FET Type :

P-Channel

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Number of Channels :

1

Input Capacitance :

340pF

Published :

2016

Width :

6.29mm

Rise Time :

27ns

Turn-Off Delay Time :

7.3 ns

Drain to Source Resistance :

1.5Ohm

Input Capacitance (Ciss) (Max) @ Vds :

340pF @ 25V

Number of Pins :

4

Length :

5mm

Rds On Max :

1.5 Ω

Vgs(th) (Max) @ Id :

4V @ 250µA

Package / Case :

4-DIP (0.300, 7.62mm)

Continuous Drain Current (ID) :

560mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Max Operating Temperature :

150°C

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

1.5Ohm @ 340mA, 10V

Operating Temperature :

-55°C~150°C TJ