IRFD9210PBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

8 Weeks

Rds On Max :

3 Ω

FET Type :

P-Channel

Power Dissipation-Max :

1W Ta

Drain to Source Voltage (Vdss) :

200V

Min Operating Temperature :

-55°C

Number of Pins :

4

Input Capacitance (Ciss) (Max) @ Vds :

170pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Operating Temperature :

175°C

Mounting Type :

Through Hole

Drain to Source Resistance :

3Ohm

Fall Time (Typ) :

12 ns

Gate Charge (Qg) (Max) @ Vgs :

8.9nC @ 10V

Supplier Device Package :

4-DIP, Hexdip, HVMDIP

Threshold Voltage :

-4V

Drain to Source Breakdown Voltage :

200V

Radiation Hardening :

No

Input Capacitance :

170pF

Packaging :

Tube

Mount :

Through Hole

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

3Ohm @ 240mA, 10V

Package / Case :

4-DIP (0.300, 7.62mm)

Turn On Delay Time :

8 ns

Rise Time :

12ns

Number of Elements :

1

Lead Free :

Lead Free

Operating Temperature :

-55°C~150°C TJ

REACH SVHC :

Unknown

Turn-Off Delay Time :

11 ns

Power Dissipation :

1W

Current - Continuous Drain (Id) @ 25°C :

400mA Ta

Vgs (Max) :

±20V

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

400mA

Resistance :

3Ohm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Published :

2014

Vgs(th) (Max) @ Id :

4V @ 250µA