IRFD9210

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Resistance :

3Ohm

Length :

5mm

Drain to Source Voltage (Vdss) :

200V

Number of Channels :

1

RoHS Status :

Non-RoHS Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Power Dissipation :

1W

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

3Ohm @ 240mA, 10V

Power Dissipation-Max :

1W Ta

Drain to Source Breakdown Voltage :

-200V

Input Capacitance (Ciss) (Max) @ Vds :

170pF @ 25V

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

4V @ 250µA

Fall Time (Typ) :

12 ns

Turn-Off Delay Time :

11 ns

Max Operating Temperature :

150°C

FET Type :

P-Channel

Rise Time :

12ns

Rds On Max :

3 Ω

Mounting Type :

Through Hole

Radiation Hardening :

No

Width :

6.29mm

Min Operating Temperature :

-55°C

Operating Temperature :

-55°C~150°C TJ

Mount :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

8.9nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

400mA Ta

Package / Case :

4-DIP (0.300, 7.62mm)

Supplier Device Package :

4-DIP, Hexdip, HVMDIP

Input Capacitance :

170pF

Height :

3.37mm

Number of Pins :

4

Vgs (Max) :

±20V

Turn On Delay Time :

8 ns

Published :

2012

Continuous Drain Current (ID) :

400mA