IRFD9123

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

3

Drain Current-Max (Abs) (ID) :

0.8A

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

4V @ 250µA

Terminal Finish :

TIN LEAD

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

Pbfree Code :

No

Terminal Position :

Dual

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

600m Ω @ 600mA, 10V

Transistor Element Material :

SILICON

Reach Compliance Code :

Unknown

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

100V

RoHS Status :

Non-RoHS Compliant

JESD-609 Code :

e0

Package / Case :

4-DIP (0.300, 7.62mm)

Case Connection :

DRAIN

Qualification Status :

COMMERCIAL

Current - Continuous Drain (Id) @ 25°C :

1A Ta

Number of Elements :

1

Surface Mount :

No

JESD-30 Code :

R-PDIP-T3

DS Breakdown Voltage-Min :

80V

Packaging :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

390pF @ 25V

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.8Ohm

FET Type :

P-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE