IRFD9120PBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Height :

3.3782mm

Continuous Drain Current (ID) :

-1A

Pulsed Drain Current-Max (IDM) :

8A

Transistor Element Material :

SILICON

Turn On Delay Time :

9.6 ns

Width :

5.0038mm

Rise Time :

29ns

Fall Time (Typ) :

29 ns

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Voltage - Rated DC :

-100V

Vgs(th) (Max) @ Id :

4V @ 250µA

Length :

6.2738mm

Power Dissipation-Max :

1.3W Ta

ECCN Code :

EAR99

Mount :

Through Hole

Mounting Type :

Through Hole

Current Rating :

-1A

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Resistance :

600mOhm

Additional Feature :

AVALANCHE RATED

Rds On (Max) @ Id, Vgs :

600m Ω @ 600mA, 10V

Case Connection :

DRAIN

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

390pF @ 25V

Vgs (Max) :

±20V

Terminal Position :

Dual

Number of Terminations :

4

FET Type :

P-Channel

Operating Temperature :

-55°C~175°C TJ

Factory Lead Time :

8 Weeks

Pbfree Code :

yes

Number of Pins :

4

Drain to Source Breakdown Voltage :

100V

Pin Count :

4

Turn-Off Delay Time :

21 ns

Power Dissipation :

1.3W

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

1A Ta

REACH SVHC :

Unknown

Drain Current-Max (Abs) (ID) :

1A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Nominal Vgs :

-4 V

Package / Case :

4-DIP (0.300, 7.62mm)

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

Recovery Time :

200 ns

Lead Free :

Lead Free

Threshold Voltage :

-4V

Packaging :

Tube

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

20V

Published :

2011