IRFD9120

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

HTS Code :

8541.29.00.95

RoHS Status :

Non-RoHS Compliant

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain-source On Resistance-Max :

0.6Ohm

DS Breakdown Voltage-Min :

100V

Package / Case :

4-DIP (0.300, 7.62mm)

Qualification Status :

Not Qualified

Power Dissipation-Max :

1.3W Ta

Transistor Application :

SWITCHING

Number of Terminations :

4

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tube

Case Connection :

DRAIN

Drain Current-Max (Abs) (ID) :

1A

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

Terminal Finish :

Tin/Lead (Sn/Pb)

JESD-30 Code :

R-PDIP-T4

Surface Mount :

No

Vgs(th) (Max) @ Id :

4V @ 250µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Dual

Pbfree Code :

No

Current - Continuous Drain (Id) @ 25°C :

1A Ta

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs (Max) :

±20V

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss) :

100V

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

JESD-609 Code :

e0

Operating Temperature :

-55°C~175°C TJ

Rds On (Max) @ Id, Vgs :

600m Ω @ 600mA, 10V

FET Type :

P-Channel

Reach Compliance Code :

Unknown

Input Capacitance (Ciss) (Max) @ Vds :

390pF @ 25V