IRFD9110PBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

1.3W Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

4-DIP (0.300, 7.62mm)

Terminal Position :

Dual

Drain to Source Breakdown Voltage :

100V

JESD-30 Code :

R-PDIP-T3

Pin Count :

3

Resistance :

1.2Ohm

FET Type :

P-Channel

Lead Free :

Lead Free

Vgs (Max) :

±20V

Additional Feature :

AVALANCHE RATED

Drain Current-Max (Abs) (ID) :

0.7A

Vgs(th) (Max) @ Id :

4V @ 250µA

Published :

2004

Current - Continuous Drain (Id) @ 25°C :

700mA Ta

Factory Lead Time :

8 Weeks

Continuous Drain Current (ID) :

-700mA

Operating Temperature :

-55°C~175°C TJ

Turn-Off Delay Time :

15 ns

Number of Pins :

4

Radiation Hardening :

No

Height :

3.3782mm

Transistor Application :

SWITCHING

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Current Rating :

-700mA

Number of Elements :

1

Number of Terminations :

3

REACH SVHC :

Unknown

Voltage - Rated DC :

-100V

Threshold Voltage :

-4V

Power Dissipation :

1.3W

Gate to Source Voltage (Vgs) :

20V

Turn On Delay Time :

10 ns

Packaging :

Tube

Pbfree Code :

yes

Case Connection :

DRAIN

RoHS Status :

ROHS3 Compliant

Width :

5.0038mm

Rds On (Max) @ Id, Vgs :

1.2 Ω @ 420mA, 10V

Nominal Vgs :

-4 V

ECCN Code :

EAR99

Mount :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

200pF @ 25V

Length :

6.2738mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Element Configuration :

Single

Fall Time (Typ) :

27 ns

Rise Time :

27ns

Gate Charge (Qg) (Max) @ Vgs :

8.7nC @ 10V

Pulsed Drain Current-Max (IDM) :

5.6A