IRFD9024
- Mfr.Part #
- IRFD9024
- Manufacturer
- Vishay
- Package / Case
- 4-DIP (0.300, 7.62mm)
- Datasheet
- Download
- Description
- MOSFET P-CH 60V 1.6A 4DIP
- Stock
- 22,635
- In Stock :
- 22,635
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- REACH SVHC :
- Unknown
- Packaging :
- Tube
- Height :
- 3.37mm
- Rise Time :
- 68ns
- Gate to Source Voltage (Vgs) :
- 20V
- Drain to Source Resistance :
- 280mOhm
- Supplier Device Package :
- 4-DIP, Hexdip, HVMDIP
- Published :
- 2015
- Input Capacitance (Ciss) (Max) @ Vds :
- 570pF @ 25V
- FET Type :
- P-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 19nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 280mOhm @ 960mA, 10V
- Min Operating Temperature :
- -55°C
- Length :
- 5mm
- Operating Temperature :
- -55°C~175°C TJ
- Fall Time (Typ) :
- 68 ns
- Max Operating Temperature :
- 175°C
- Mounting Type :
- Through Hole
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Drain to Source Breakdown Voltage :
- -60V
- Number of Pins :
- 4
- Input Capacitance :
- 570pF
- Drain to Source Voltage (Vdss) :
- 60V
- Width :
- 6.29mm
- Turn On Delay Time :
- 13 ns
- Nominal Vgs :
- -4 V
- Vgs (Max) :
- ±20V
- RoHS Status :
- Non-RoHS Compliant
- Rds On Max :
- 280 mΩ
- Continuous Drain Current (ID) :
- 1.6A
- Current - Continuous Drain (Id) @ 25°C :
- 1.6A Ta
- Number of Channels :
- 1
- Mount :
- Through Hole
- Package / Case :
- 4-DIP (0.300, 7.62mm)
- Turn-Off Delay Time :
- 15 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation-Max :
- 1.3W Ta
- Datasheets
- IRFD9024

P-Channel Tube 280mOhm @ 960mA, 10V ±20V 570pF @ 25V 19nC @ 10V 60V 4-DIP (0.300, 7.62mm)
IRFD9024 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 570pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 1.6A.With a drain-source breakdown voltage of -60V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of -60V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 15 ns.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 280mOhm exists between the drain and source.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 13 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 60V.Using drive voltage (10V) reduces this device's overall power consumption.
IRFD9024 Features
a continuous drain current (ID) of 1.6A
a drain-to-source breakdown voltage of -60V voltage
the turn-off delay time is 15 ns
single MOSFETs transistor is 280mOhm
a 60V drain to source voltage (Vdss)
IRFD9024 Applications
There are a lot of Vishay Siliconix
IRFD9024 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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