IRFD9020

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Mfr.Part #
IRFD9020
Manufacturer
Vishay
Package / Case
4-DIP (0.300, 7.62mm)
Datasheet
Download
Description
MOSFET P-CH 60V 1.6A 4DIP
Stock
29,774
In Stock :
29,774

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Rise Time :
68ns
Package / Case :
4-DIP (0.300, 7.62mm)
Lead Free :
Contains Lead
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Min Operating Temperature :
-55°C
Turn-Off Delay Time :
15 ns
Continuous Drain Current (ID) :
1.6A
Drain to Source Voltage (Vdss) :
60V
Packaging :
Tube
Drive Voltage (Max Rds On,Min Rds On) :
10V
Height :
3.37mm
Input Capacitance :
570pF
Vgs(th) (Max) @ Id :
4V @ 1μA
Input Capacitance (Ciss) (Max) @ Vds :
570pF @ 25V
Fall Time (Typ) :
68 ns
Gate to Source Voltage (Vgs) :
20V
Rds On Max :
280 mΩ
Published :
2017
Radiation Hardening :
No
Max Operating Temperature :
150°C
Mount :
Through Hole
Power Dissipation-Max :
1.3W Ta
RoHS Status :
Non-RoHS Compliant
Rds On (Max) @ Id, Vgs :
280mOhm @ 960mA, 10V
Supplier Device Package :
4-DIP, Hexdip, HVMDIP
Length :
5mm
FET Type :
P-Channel
Drain to Source Resistance :
280mOhm
Current - Continuous Drain (Id) @ 25°C :
1.6A Ta
Gate Charge (Qg) (Max) @ Vgs :
19nC @ 10V
Voltage - Rated DC :
-50V
Operating Temperature :
-55°C~175°C TJ
Current Rating :
-1.6A
Vgs (Max) :
±20V
Mounting Type :
Through Hole
Turn On Delay Time :
13 ns
Number of Channels :
1
Width :
6.29mm
Number of Pins :
4
Datasheets
IRFD9020
Introducing Transistors - FETs, MOSFETs - Single Vishay IRFD9020 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:4-DIP (0.300, 7.62mm), Operating Temperature:-55°C~175°C TJ, Mounting Type:Through Hole, Number of Channels:1, Number of Pins:4, IRFD9020 pinout, IRFD9020 datasheet PDF, IRFD9020 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay IRFD9020 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay IRFD9020


P-Channel Tube 280mOhm @ 960mA, 10V ±20V 570pF @ 25V 19nC @ 10V 60V 4-DIP (0.300, 7.62mm)

IRFD9020 Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 570pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 15 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 280mOhm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 13 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 60V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IRFD9020 Features


a continuous drain current (ID) of 1.6A
the turn-off delay time is 15 ns
single MOSFETs transistor is 280mOhm
a 60V drain to source voltage (Vdss)


IRFD9020 Applications


There are a lot of Vishay Siliconix
IRFD9020 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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