IRFD9020
- Mfr.Part #
- IRFD9020
- Manufacturer
- Vishay
- Package / Case
- 4-DIP (0.300, 7.62mm)
- Datasheet
- Download
- Description
- MOSFET P-CH 60V 1.6A 4DIP
- Stock
- 29,774
- In Stock :
- 29,774
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rise Time :
- 68ns
- Package / Case :
- 4-DIP (0.300, 7.62mm)
- Lead Free :
- Contains Lead
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Min Operating Temperature :
- -55°C
- Turn-Off Delay Time :
- 15 ns
- Continuous Drain Current (ID) :
- 1.6A
- Drain to Source Voltage (Vdss) :
- 60V
- Packaging :
- Tube
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Height :
- 3.37mm
- Input Capacitance :
- 570pF
- Vgs(th) (Max) @ Id :
- 4V @ 1μA
- Input Capacitance (Ciss) (Max) @ Vds :
- 570pF @ 25V
- Fall Time (Typ) :
- 68 ns
- Gate to Source Voltage (Vgs) :
- 20V
- Rds On Max :
- 280 mΩ
- Published :
- 2017
- Radiation Hardening :
- No
- Max Operating Temperature :
- 150°C
- Mount :
- Through Hole
- Power Dissipation-Max :
- 1.3W Ta
- RoHS Status :
- Non-RoHS Compliant
- Rds On (Max) @ Id, Vgs :
- 280mOhm @ 960mA, 10V
- Supplier Device Package :
- 4-DIP, Hexdip, HVMDIP
- Length :
- 5mm
- FET Type :
- P-Channel
- Drain to Source Resistance :
- 280mOhm
- Current - Continuous Drain (Id) @ 25°C :
- 1.6A Ta
- Gate Charge (Qg) (Max) @ Vgs :
- 19nC @ 10V
- Voltage - Rated DC :
- -50V
- Operating Temperature :
- -55°C~175°C TJ
- Current Rating :
- -1.6A
- Vgs (Max) :
- ±20V
- Mounting Type :
- Through Hole
- Turn On Delay Time :
- 13 ns
- Number of Channels :
- 1
- Width :
- 6.29mm
- Number of Pins :
- 4
- Datasheets
- IRFD9020

P-Channel Tube 280mOhm @ 960mA, 10V ±20V 570pF @ 25V 19nC @ 10V 60V 4-DIP (0.300, 7.62mm)
IRFD9020 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 570pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 15 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 280mOhm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 13 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 60V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IRFD9020 Features
a continuous drain current (ID) of 1.6A
the turn-off delay time is 15 ns
single MOSFETs transistor is 280mOhm
a 60V drain to source voltage (Vdss)
IRFD9020 Applications
There are a lot of Vishay Siliconix
IRFD9020 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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