IRFD9014

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

4-DIP (0.300, 7.62mm)

Vgs (Max) :

±20V

Power Dissipation-Max :

1.3W Ta

Voltage - Rated DC :

-60V

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 10V

Power Dissipation :

1.3W

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

500mOhm @ 660mA, 10V

Turn-Off Delay Time :

10 ns

Supplier Device Package :

4-DIP, Hexdip, HVMDIP

Lead Free :

Contains Lead

Fall Time (Typ) :

63 ns

Published :

2012

Mount :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

1.1A Ta

Current Rating :

-1.1A

Number of Channels :

1

Number of Elements :

1

Operating Temperature :

-55°C~175°C TJ

Length :

5mm

Input Capacitance :

270pF

Width :

6.29mm

Min Operating Temperature :

-55°C

Drain to Source Breakdown Voltage :

-60V

Packaging :

Tube

Drain to Source Resistance :

500MOhm

Number of Pins :

4

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Rise Time :

63ns

Max Operating Temperature :

175°C

Continuous Drain Current (ID) :

-1.1A

Mounting Type :

Through Hole

Drain to Source Voltage (Vdss) :

60V

Height :

3.37mm

Turn On Delay Time :

11 ns

FET Type :

P-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

Non-RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds :

270pF @ 25V

Rds On Max :

500 mΩ