IRFD9010PBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Voltage - Rated DC :

-50V

Rise Time :

47ns

Input Capacitance (Ciss) (Max) @ Vds :

240pF @ 25V

Number of Pins :

4

Lead Free :

Lead Free

Factory Lead Time :

8 Weeks

FET Type :

P-Channel

REACH SVHC :

Unknown

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Rds On Max :

500 mΩ

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 10V

Mount :

Through Hole

Power Dissipation :

1W

Turn On Delay Time :

6.1 ns

Vgs (Max) :

±20V

Radiation Hardening :

No

Threshold Voltage :

-4V

Height :

3.3782mm

Current - Continuous Drain (Id) @ 25°C :

1.1A Tc

Package / Case :

4-DIP (0.300, 7.62mm)

Supplier Device Package :

4-DIP, Hexdip, HVMDIP

Vgs(th) (Max) @ Id :

4V @ 250µA

Min Operating Temperature :

-55°C

Drain to Source Breakdown Voltage :

50V

Operating Temperature :

-55°C~150°C TJ

Current Rating :

-1.1A

Gate to Source Voltage (Vgs) :

20V

Width :

5.0038mm

Packaging :

Tube

Mounting Type :

Through Hole

Published :

2010

Power Dissipation-Max :

1W Tc

Continuous Drain Current (ID) :

-1.1A

Fall Time (Typ) :

39 ns

Turn-Off Delay Time :

13 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Length :

6.2738mm

Max Operating Temperature :

150°C

Input Capacitance :

240pF

Drain to Source Voltage (Vdss) :

50V

Rds On (Max) @ Id, Vgs :

500mOhm @ 580mA, 10V

Drain to Source Resistance :

350mOhm

Element Configuration :

Single