IRFD420
- Mfr.Part #
- IRFD420
- Manufacturer
- Vishay
- Package / Case
- 4-DIP (0.300, 7.62mm)
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 370MA 4DIP
- Stock
- 8,049
- In Stock :
- 8,049
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Voltage - Rated DC :
- 500V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation :
- 1.3W
- Mount :
- Through Hole
- Supplier Device Package :
- 4-DIP, Hexdip, HVMDIP
- Rds On (Max) @ Id, Vgs :
- 3Ohm @ 220mA, 10V
- Width :
- 6.29mm
- Current - Continuous Drain (Id) @ 25°C :
- 370mA Ta
- Drain to Source Resistance :
- 3Ohm
- Number of Channels :
- 1
- FET Type :
- N-Channel
- Packaging :
- Tube
- Package / Case :
- 4-DIP (0.300, 7.62mm)
- Rise Time :
- 8.6ns
- Number of Pins :
- 4
- Drain to Source Breakdown Voltage :
- 500V
- Input Capacitance :
- 360pF
- Operating Temperature :
- -55°C~150°C TJ
- Gate Charge (Qg) (Max) @ Vgs :
- 24nC @ 10V
- Lead Free :
- Contains Lead
- Radiation Hardening :
- No
- Turn-Off Delay Time :
- 33 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 360pF @ 25V
- Turn On Delay Time :
- 8 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Min Operating Temperature :
- -55°C
- Power Dissipation-Max :
- 1W Ta
- Rds On Max :
- 3 Ω
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Published :
- 2016
- Max Operating Temperature :
- 150°C
- Vgs (Max) :
- ±20V
- Mounting Type :
- Through Hole
- Gate to Source Voltage (Vgs) :
- 20V
- Fall Time (Typ) :
- 8.6 ns
- Drain to Source Voltage (Vdss) :
- 500V
- Height :
- 3.37mm
- Continuous Drain Current (ID) :
- 370mA
- Length :
- 5mm
- Current Rating :
- 460mA
- RoHS Status :
- Non-RoHS Compliant
- Datasheets
- IRFD420

N-Channel Tube 3Ohm @ 220mA, 10V ±20V 360pF @ 25V 24nC @ 10V 500V 4-DIP (0.300, 7.62mm)
IRFD420 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 360pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 370mA amps.In this device, the drain-source breakdown voltage is 500V and VGS=500V, so the drain-source breakdown voltage is 500V in this case.It is [33 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 3Ohm.A turn-on delay time of 8 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you will need a 500V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IRFD420 Features
a continuous drain current (ID) of 370mA
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 33 ns
single MOSFETs transistor is 3Ohm
a 500V drain to source voltage (Vdss)
IRFD420 Applications
There are a lot of Vishay Siliconix
IRFD420 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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