IRFD323

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Package Shape :

RECTANGULAR

Transistor Application :

SWITCHING

Qualification Status :

COMMERCIAL

DS Breakdown Voltage-Min :

350 V

Gate Charge (Qg) (Max) @ Vgs :

15 nC @ 10 V

Terminal Finish :

TIN LEAD

FET Feature :

-

FET Type :

N-Channel

Mounting Type :

Through Hole

Vgs (Max) :

±20V

Polarity/Channel Type :

N-Channel

Rds On (Max) @ Id, Vgs :

2.5Ohm @ 250mA, 10V

Drive Voltage (Max Rds On, Min Rds On) :

10V

Drain-source On Resistance-Max :

2.5 Ω

Supplier Device Package :

4-DIP, Hexdip

Number of Elements :

1

Manufacturer :

Rochester Electronics LLC

Current - Continuous Drain (Id) @ 25°C :

400mA (Tc)

Terminal Position :

Dual

Series :

-

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Reach Compliance Code :

Unknown

Power Dissipation (Max) :

1W (Tc)

RoHS :

Non-Compliant

Operating Temperature :

-55°C ~ 150°C (TJ)

Drain to Source Voltage (Vdss) :

350 V

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminals :

3

JESD-30 Code :

R-PDIP-T3

Product Status :

Active

JESD-609 Code :

e0

Vgs(th) (Max) @ Id :

4V @ 250µA

Package :

Bulk

Input Capacitance (Ciss) (Max) @ Vds :

455 pF @ 25 V

Transistor Element Material :

SILICON

Surface Mount :

No

Package / Case :

4-DIP (0.300", 7.62mm)

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

No

Terminal Form :

THROUGH-HOLE

FET Technology :

METAL-OXIDE SEMICONDUCTOR