IRFD322

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

TIN LEAD

Operating Temperature :

-55°C ~ 150°C (TJ)

Vgs(th) (Max) @ Id :

4V @ 250µA

Current - Continuous Drain (Id) @ 25°C :

400mA (Tc)

Terminal Position :

Dual

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

2.5Ohm @ 250mA, 10V

Supplier Device Package :

4-DIP, Hexdip

Manufacturer :

Rochester Electronics LLC

Input Capacitance (Ciss) (Max) @ Vds :

455 pF @ 25 V

Drain to Source Voltage (Vdss) :

400 V

Gate Charge (Qg) (Max) @ Vgs :

15 nC @ 10 V

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

2.5 Ω

Vgs (Max) :

±20V

Mounting Type :

Through Hole

Reach Compliance Code :

Unknown

Package Shape :

RECTANGULAR

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code :

e0

Drive Voltage (Max Rds On, Min Rds On) :

10V

Package / Case :

4-DIP (0.300", 7.62mm)

FET Type :

N-Channel

Transistor Element Material :

SILICON

Package :

Bulk

Surface Mount :

No

Number of Elements :

1

FET Feature :

-

Terminal Form :

THROUGH-HOLE

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

R-PDIP-T3

Pbfree Code :

No

Operating Mode :

ENHANCEMENT MODE

Series :

-

Power Dissipation (Max) :

1W (Tc)

Product Status :

Active

Qualification Status :

COMMERCIAL

Number of Terminals :

3

DS Breakdown Voltage-Min :

400 V

Polarity/Channel Type :

N-Channel