IRFD321

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Supplier Device Package :

4-DIP, Hexdip

Power Dissipation (Max) :

1W (Tc)

Vgs (Max) :

±20V

FET Feature :

-

Drain to Source Voltage (Vdss) :

350 V

Input Capacitance (Ciss) (Max) @ Vds :

455 pF @ 25 V

Mounting Type :

Through Hole

Series :

-

Vgs(th) (Max) @ Id :

4V @ 250µA

Rds On (Max) @ Id, Vgs :

1.8Ohm @ 250mA, 10V

Operating Temperature :

-55°C ~ 150°C (TJ)

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

500mA (Tc)

Product Status :

Active

Package :

Bulk

Package / Case :

4-DIP (0.300", 7.62mm)

Gate Charge (Qg) (Max) @ Vgs :

15 nC @ 10 V

Drive Voltage (Max Rds On, Min Rds On) :

10V