IRFD320PBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

ROHS3 Compliant

REACH SVHC :

Unknown

Length :

5mm

Mount :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

1W Ta

Turn On Delay Time :

10 ns

JESD-30 Code :

R-PDIP-T3

Packaging :

Tube

Fall Time (Typ) :

14 ns

Power Dissipation :

1W

Input Capacitance (Ciss) (Max) @ Vds :

410pF @ 25V

FET Type :

N-Channel

Continuous Drain Current (ID) :

490mA

Factory Lead Time :

8 Weeks

Operating Temperature :

-55°C~150°C TJ

Package / Case :

4-DIP (0.300, 7.62mm)

Number of Pins :

4

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Pbfree Code :

yes

Turn-Off Delay Time :

30 ns

Published :

2009

Radiation Hardening :

No

Number of Terminations :

3

Rise Time :

14ns

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

Vgs (Max) :

±20V

Additional Feature :

AVALANCHE RATED

Nominal Vgs :

4 V

Current - Continuous Drain (Id) @ 25°C :

490mA Ta

Width :

6.29mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Pin Count :

4

Height :

3.37mm

Terminal Position :

Dual

Vgs(th) (Max) @ Id :

4V @ 250µA

Rds On (Max) @ Id, Vgs :

1.8 Ω @ 210mA, 10V

Gate to Source Voltage (Vgs) :

20V

Drain to Source Breakdown Voltage :

400V

Number of Elements :

1