IRFD313

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

350 V

Series :

-

Reach Compliance Code :

Unknown

Number of Elements :

1

Terminal Form :

THROUGH-HOLE

Manufacturer :

Rochester Electronics LLC

Drain-source On Resistance-Max :

5 Ω

Rds On (Max) @ Id, Vgs :

5Ohm @ 200mA, 10V

Package / Case :

4-DIP (0.300", 7.62mm)

Qualification Status :

COMMERCIAL

FET Feature :

-

Transistor Application :

SWITCHING

FET Type :

N-Channel

Product Status :

Active

Drive Voltage (Max Rds On, Min Rds On) :

10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

135 pF @ 25 V

Gate Charge (Qg) (Max) @ Vgs :

7.5 nC @ 10 V

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

300mA (Tc)

Mounting Type :

Through Hole

Package :

Bulk

Pbfree Code :

No

Terminal Finish :

TIN LEAD

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Terminals :

3

Power Dissipation (Max) :

1W (Tc)

Terminal Position :

Dual

Operating Temperature :

-55°C ~ 150°C (TJ)

Package Shape :

RECTANGULAR

JESD-30 Code :

R-PDIP-T3

Transistor Element Material :

SILICON

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Configuration :

SINGLE WITH BUILT-IN DIODE

Polarity/Channel Type :

N-Channel

Surface Mount :

No

DS Breakdown Voltage-Min :

350 V

Supplier Device Package :

4-DIP, Hexdip

JESD-609 Code :

e0

Vgs (Max) :

±20V