IRFD311

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

FET Feature :

-

Product Status :

Active

Gate Charge (Qg) (Max) @ Vgs :

7.5 nC @ 10 V

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

135 pF @ 25 V

FET Type :

N-Channel

Package / Case :

4-DIP (0.300", 7.62mm)

Vgs(th) (Max) @ Id :

4V @ 250µA

Drive Voltage (Max Rds On, Min Rds On) :

10V

Operating Temperature :

-55°C ~ 150°C (TJ)

Series :

-

Drain to Source Voltage (Vdss) :

350 V

Power Dissipation (Max) :

1W (Tc)

Current - Continuous Drain (Id) @ 25°C :

400mA (Tc)

Package :

Bulk

Rds On (Max) @ Id, Vgs :

3.6Ohm @ 200mA, 10V

Supplier Device Package :

4-DIP, Hexdip

Mounting Type :

Through Hole