IRFD310PBF
- Mfr.Part #
- IRFD310PBF
- Manufacturer
- Vishay
- Package / Case
- 4-DIP (0.300, 7.62mm)
- Datasheet
- Download
- Description
- MOSFET N-CH 400V 350MA 4DIP
- Stock
- 7,106
- In Stock :
- 7,106
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- -55°C~150°C TJ
- Min Operating Temperature :
- -55°C
- FET Type :
- N-Channel
- Drain to Source Breakdown Voltage :
- 400V
- Package / Case :
- 4-DIP (0.300, 7.62mm)
- Power Dissipation-Max :
- 1W Ta
- Gate to Source Voltage (Vgs) :
- 20V
- Mounting Type :
- Through Hole
- Number of Pins :
- 4
- Drain to Source Resistance :
- 3.6Ohm
- Continuous Drain Current (ID) :
- 350mA
- Width :
- 5mm
- Input Capacitance :
- 170pF
- Height :
- 3.37mm
- Current - Continuous Drain (Id) @ 25°C :
- 350mA Ta
- Number of Elements :
- 1
- Published :
- 2014
- Max Operating Temperature :
- 150°C
- Factory Lead Time :
- 8 Weeks
- Vgs (Max) :
- ±20V
- Mount :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 170pF @ 25V
- Supplier Device Package :
- 4-DIP, Hexdip, HVMDIP
- REACH SVHC :
- Unknown
- Drain to Source Voltage (Vdss) :
- 400V
- Turn On Delay Time :
- 8 ns
- Threshold Voltage :
- 4V
- Turn-Off Delay Time :
- 21 ns
- Rise Time :
- 9.9ns
- Rds On (Max) @ Id, Vgs :
- 3.6Ohm @ 210mA, 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- RoHS Status :
- ROHS3 Compliant
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Packaging :
- Tube
- Length :
- 6.29mm
- Gate Charge (Qg) (Max) @ Vgs :
- 17nC @ 10V
- Rds On Max :
- 3.6 Ω
- Radiation Hardening :
- No
- Power Dissipation :
- 1W
- Fall Time (Typ) :
- 9.9 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- IRFD310PBF

N-Channel Tube 3.6Ohm @ 210mA, 10V ±20V 170pF @ 25V 17nC @ 10V 400V 4-DIP (0.300, 7.62mm)
IRFD310PBF Overview
A device's maximal input capacitance is 170pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 350mA, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 400V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 21 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 3.6Ohm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 8 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 4V threshold voltage.This transistor requires a 400V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IRFD310PBF Features
a continuous drain current (ID) of 350mA
a drain-to-source breakdown voltage of 400V voltage
the turn-off delay time is 21 ns
single MOSFETs transistor is 3.6Ohm
a threshold voltage of 4V
a 400V drain to source voltage (Vdss)
IRFD310PBF Applications
There are a lot of Vishay Siliconix
IRFD310PBF applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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