IRFD310

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Rds On (Max) @ Id, Vgs :

3.6Ohm @ 210mA, 10V

Drain to Source Voltage (Vdss) :

400V

Supplier Device Package :

4-DIP, Hexdip, HVMDIP

FET Type :

N-Channel

Max Operating Temperature :

150°C

Width :

6.29mm

Gate to Source Voltage (Vgs) :

20V

Turn On Delay Time :

8 ns

Min Operating Temperature :

-55°C

Input Capacitance (Ciss) (Max) @ Vds :

170pF @ 25V

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

350mA Ta

Continuous Drain Current (ID) :

350mA

Mount :

Through Hole

Rise Time :

9.9ns

Length :

5mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

Height :

3.37mm

Fall Time (Typ) :

9.9 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Radiation Hardening :

No

Vgs (Max) :

±20V

Power Dissipation-Max :

1W Ta

Number of Channels :

1

Rds On Max :

3.6 Ω

Packaging :

Tube

Turn-Off Delay Time :

21 ns

RoHS Status :

Non-RoHS Compliant

Package / Case :

4-DIP (0.300, 7.62mm)

Input Capacitance :

170pF

Drain to Source Resistance :

3.6Ohm

Number of Pins :

4

Published :

2016