IRFD224PBF

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Mfr.Part #
IRFD224PBF
Manufacturer
Vishay
Package / Case
4-DIP (0.300, 7.62mm)
Datasheet
Download
Description
MOSFET N-CH 250V 630MA 4DIP
Stock
1,672
In Stock :
1,672

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Input Capacitance :
260pF
Radiation Hardening :
No
Drive Voltage (Max Rds On,Min Rds On) :
10V
Operating Temperature :
-55°C~150°C TJ
Factory Lead Time :
8 Weeks
Vgs (Max) :
±20V
Max Operating Temperature :
150°C
Number of Pins :
4
Gate to Source Voltage (Vgs) :
20V
Input Capacitance (Ciss) (Max) @ Vds :
260pF @ 25V
Drain to Source Breakdown Voltage :
250V
Rds On (Max) @ Id, Vgs :
1.1Ohm @ 380mA, 10V
Power Dissipation-Max :
1W Ta
RoHS Status :
ROHS3 Compliant
Power Dissipation :
1W
Supplier Device Package :
4-DIP, Hexdip, HVMDIP
Package / Case :
4-DIP (0.300, 7.62mm)
Current - Continuous Drain (Id) @ 25°C :
630mA Ta
Turn-Off Delay Time :
20 ns
Drain to Source Voltage (Vdss) :
250V
Mount :
Through Hole
Rise Time :
13ns
Min Operating Temperature :
-55°C
FET Type :
N-Channel
Turn On Delay Time :
7 ns
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
14nC @ 10V
Number of Elements :
1
Rds On Max :
1.1 Ω
Packaging :
Tube
Drain to Source Resistance :
1.1Ohm
Fall Time (Typ) :
13 ns
Published :
2011
Mounting Type :
Through Hole
Continuous Drain Current (ID) :
630mA
Datasheets
IRFD224PBF
Introducing Transistors - FETs, MOSFETs - Single Vishay IRFD224PBF from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Pins:4, Package / Case:4-DIP (0.300, 7.62mm), Mounting Type:Through Hole, IRFD224PBF pinout, IRFD224PBF datasheet PDF, IRFD224PBF amp .Beyond Transistors - FETs, MOSFETs - Single Vishay IRFD224PBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay IRFD224PBF


N-Channel Tube 1.1Ohm @ 380mA, 10V ±20V 260pF @ 25V 14nC @ 10V 250V 4-DIP (0.300, 7.62mm)

IRFD224PBF Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 260pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 250V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 250V.As a result of its turn-off delay time, which is 20 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 1.1Ohm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 7 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 250V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IRFD224PBF Features


a continuous drain current (ID) of 630mA
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 20 ns
single MOSFETs transistor is 1.1Ohm
a 250V drain to source voltage (Vdss)


IRFD224PBF Applications


There are a lot of Vishay Siliconix
IRFD224PBF applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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