IRFD224
- Mfr.Part #
- IRFD224
- Manufacturer
- Vishay
- Package / Case
- 4-DIP (0.300, 7.62mm)
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 630MA 4DIP
- Stock
- 1,086
- In Stock :
- 1,086
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 260pF @ 25V
- Published :
- 2016
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Input Capacitance :
- 260pF
- Mount :
- Through Hole
- Drain to Source Voltage (Vdss) :
- 250V
- Package / Case :
- 4-DIP (0.300, 7.62mm)
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation-Max :
- 1W Ta
- Turn On Delay Time :
- 7 ns
- Vgs (Max) :
- ±20V
- RoHS Status :
- Non-RoHS Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 630mA Ta
- Packaging :
- Tube
- Continuous Drain Current (ID) :
- 630mA
- Mounting Type :
- Through Hole
- Rise Time :
- 13ns
- Fall Time (Typ) :
- 12 ns
- Supplier Device Package :
- 4-DIP, Hexdip, HVMDIP
- Max Operating Temperature :
- 150°C
- Turn-Off Delay Time :
- 20 ns
- Min Operating Temperature :
- -55°C
- Rds On (Max) @ Id, Vgs :
- 1.1Ohm @ 380mA, 10V
- Factory Lead Time :
- 6 Weeks
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Gate to Source Voltage (Vgs) :
- 20V
- Gate Charge (Qg) (Max) @ Vgs :
- 14nC @ 10V
- Number of Pins :
- 4
- Rds On Max :
- 1.1 Ω
- FET Type :
- N-Channel
- Radiation Hardening :
- No
- Datasheets
- IRFD224

N-Channel Tube 1.1Ohm @ 380mA, 10V ±20V 260pF @ 25V 14nC @ 10V 250V 4-DIP (0.300, 7.62mm)
IRFD224 Overview
The maximum input capacitance of this device is 260pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 630mA.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 20 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 7 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 250V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IRFD224 Features
a continuous drain current (ID) of 630mA
the turn-off delay time is 20 ns
a 250V drain to source voltage (Vdss)
IRFD224 Applications
There are a lot of Vishay Siliconix
IRFD224 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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