IRFD224

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Mfr.Part #
IRFD224
Manufacturer
Vishay
Package / Case
4-DIP (0.300, 7.62mm)
Datasheet
Download
Description
MOSFET N-CH 250V 630MA 4DIP
Stock
1,086
In Stock :
1,086

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Input Capacitance (Ciss) (Max) @ Vds :
260pF @ 25V
Published :
2016
Drive Voltage (Max Rds On,Min Rds On) :
10V
Input Capacitance :
260pF
Mount :
Through Hole
Drain to Source Voltage (Vdss) :
250V
Package / Case :
4-DIP (0.300, 7.62mm)
Operating Temperature :
-55°C~150°C TJ
Power Dissipation-Max :
1W Ta
Turn On Delay Time :
7 ns
Vgs (Max) :
±20V
RoHS Status :
Non-RoHS Compliant
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current - Continuous Drain (Id) @ 25°C :
630mA Ta
Packaging :
Tube
Continuous Drain Current (ID) :
630mA
Mounting Type :
Through Hole
Rise Time :
13ns
Fall Time (Typ) :
12 ns
Supplier Device Package :
4-DIP, Hexdip, HVMDIP
Max Operating Temperature :
150°C
Turn-Off Delay Time :
20 ns
Min Operating Temperature :
-55°C
Rds On (Max) @ Id, Vgs :
1.1Ohm @ 380mA, 10V
Factory Lead Time :
6 Weeks
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate to Source Voltage (Vgs) :
20V
Gate Charge (Qg) (Max) @ Vgs :
14nC @ 10V
Number of Pins :
4
Rds On Max :
1.1 Ω
FET Type :
N-Channel
Radiation Hardening :
No
Datasheets
IRFD224
Introducing Transistors - FETs, MOSFETs - Single Vishay IRFD224 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:4-DIP (0.300, 7.62mm), Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Number of Pins:4, IRFD224 pinout, IRFD224 datasheet PDF, IRFD224 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay IRFD224 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay IRFD224


N-Channel Tube 1.1Ohm @ 380mA, 10V ±20V 260pF @ 25V 14nC @ 10V 250V 4-DIP (0.300, 7.62mm)

IRFD224 Overview


The maximum input capacitance of this device is 260pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 630mA.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 20 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 7 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 250V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IRFD224 Features


a continuous drain current (ID) of 630mA
the turn-off delay time is 20 ns
a 250V drain to source voltage (Vdss)


IRFD224 Applications


There are a lot of Vishay Siliconix
IRFD224 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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