IRFD220

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

1W

JESD-609 Code :

e0

Lead Free :

Contains Lead

Power Dissipation-Max :

1W Ta

Mounting Type :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

800mA Ta

Package / Case :

4-DIP (0.300, 7.62mm)

RoHS Status :

Non-RoHS Compliant

FET Type :

N-Channel

Packaging :

Tube

Configuration :

Single

Operating Temperature :

-55°C~150°C TJ

Pin Count :

4

Gate to Source Voltage (Vgs) :

20V

Number of Channels :

1

Pbfree Code :

No

Reach Compliance Code :

Unknown

Width :

6.29mm

Height :

3.37mm

Input Capacitance (Ciss) (Max) @ Vds :

260pF @ 25V

Continuous Drain Current (ID) :

800mA

Fall Time (Typ) :

22 ns

Drain Current-Max (Abs) (ID) :

0.8A

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain to Source Breakdown Voltage :

200V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current Rating :

800mA

Mount :

Through Hole

Turn-Off Delay Time :

19 ns

Vgs (Max) :

±20V

Published :

2015

Voltage - Rated DC :

200V

Terminal Finish :

Tin/Lead (Sn/Pb)

Rise Time :

22ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

800m Ω @ 480mA, 10V

Number of Pins :

4

Length :

5mm

Turn On Delay Time :

7.2 ns

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V