IRFD214

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Min Operating Temperature :

-55°C

Input Capacitance :

140pF

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

Non-RoHS Compliant

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Radiation Hardening :

No

Drain to Source Voltage (Vdss) :

250V

Length :

5mm

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

8.2nC @ 10V

Drain to Source Breakdown Voltage :

250V

Input Capacitance (Ciss) (Max) @ Vds :

140pF @ 25V

Package / Case :

4-DIP (0.300, 7.62mm)

Turn On Delay Time :

7 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Published :

2016

Rds On (Max) @ Id, Vgs :

2Ohm @ 270mA, 10V

Drain to Source Resistance :

2Ohm

Power Dissipation :

1W

Rise Time :

7.6ns

Width :

6.29mm

Packaging :

Tube

Number of Channels :

1

Supplier Device Package :

4-DIP, Hexdip, HVMDIP

Height :

3.37mm

Current - Continuous Drain (Id) @ 25°C :

450mA Ta

Continuous Drain Current (ID) :

450mA

Max Operating Temperature :

150°C

Mounting Type :

Through Hole

Vgs (Max) :

±20V

Factory Lead Time :

6 Weeks

Gate to Source Voltage (Vgs) :

20V

Fall Time (Typ) :

7.6 ns

Turn-Off Delay Time :

16 ns

Mount :

Through Hole

Rds On Max :

2 Ω

Number of Pins :

4

Power Dissipation-Max :

1W Ta