IRFD213

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

2 Ω @ 270mA, 10V

Input Capacitance (Ciss) (Max) @ Vds :

140pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

450mA Ta

Number of Terminations :

3

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Dual

Mounting Type :

Through Hole

RoHS Status :

Non-RoHS Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

8.2nC @ 10V

Reach Compliance Code :

Unknown

Drain to Source Voltage (Vdss) :

250V

Drain-source On Resistance-Max :

2.4Ohm

FET Type :

N-Channel

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min :

150V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

0.45A

JESD-30 Code :

R-PDIP-T3

Case Connection :

DRAIN

JESD-609 Code :

e0

Terminal Finish :

TIN LEAD

Transistor Element Material :

SILICON

Packaging :

Tube

Pbfree Code :

No

Surface Mount :

No

Package / Case :

4-DIP (0.300, 7.62mm)

Number of Elements :

1

Qualification Status :

COMMERCIAL