IRFD213

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Mfr.Part #
IRFD213
Manufacturer
Vishay
Package / Case
4-DIP (0.300, 7.62mm)
Datasheet
Download
Description
MOSFET N-CH 250V 450MA 4DIP
Stock
18,545
In Stock :
18,545

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Pbfree Code :
No
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Rds On (Max) @ Id, Vgs :
2 Ω @ 270mA, 10V
Packaging :
Tube
Current - Continuous Drain (Id) @ 25°C :
450mA Ta
Drain-source On Resistance-Max :
2.4Ohm
DS Breakdown Voltage-Min :
150V
Transistor Element Material :
SILICON
Drain to Source Voltage (Vdss) :
250V
Terminal Position :
Dual
Transistor Application :
SWITCHING
Configuration :
SINGLE WITH BUILT-IN DIODE
JESD-609 Code :
e0
Drain Current-Max (Abs) (ID) :
0.45A
JESD-30 Code :
R-PDIP-T3
Vgs(th) (Max) @ Id :
4V @ 250µA
Operating Temperature :
-55°C~150°C TJ
Operating Mode :
ENHANCEMENT MODE
Input Capacitance (Ciss) (Max) @ Vds :
140pF @ 25V
FET Type :
N-Channel
Surface Mount :
No
Mounting Type :
Through Hole
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Terminal Finish :
TIN LEAD
Qualification Status :
COMMERCIAL
Gate Charge (Qg) (Max) @ Vgs :
8.2nC @ 10V
Package / Case :
4-DIP (0.300, 7.62mm)
RoHS Status :
Non-RoHS Compliant
Number of Elements :
1
Reach Compliance Code :
Unknown
Number of Terminations :
3
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Case Connection :
DRAIN
Datasheets
IRFD213
Introducing Transistors - FETs, MOSFETs - Single Vishay IRFD213 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Package / Case:4-DIP (0.300, 7.62mm), Number of Terminations:3, IRFD213 pinout, IRFD213 datasheet PDF, IRFD213 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay IRFD213 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay IRFD213


N-Channel Tube 2 Ω @ 270mA, 10V 140pF @ 25V 8.2nC @ 10V 250V 4-DIP (0.300, 7.62mm)

IRFD213 Overview


With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 140pF @ 25V.0.45A is the drain current of this device, which is the maximum continuous current transistor can carry.To maintain normal operation, the DS breakdown voltage should be kept above 150V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 250V.

IRFD213 Features


a 250V drain to source voltage (Vdss)


IRFD213 Applications


There are a lot of Rochester Electronics, LLC
IRFD213 applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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