IRFD210

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Width :

6.29mm

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Element Material :

SILICON

Resistance :

1.5Ohm

Pbfree Code :

yes

Published :

2011

Number of Pins :

4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

200V

Number of Terminations :

4

FET Type :

N-Channel

Mount :

Through Hole

Gate to Source Voltage (Vgs) :

20V

Terminal Position :

Dual

Height :

3.37mm

Turn-Off Delay Time :

14 ns

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

REACH SVHC :

Unknown

Lead Free :

Lead Free

Current Rating :

600mA

Packaging :

Tube

Pin Count :

4

ECCN Code :

EAR99

Voltage - Rated DC :

200V

Rds On (Max) @ Id, Vgs :

1.5 Ω @ 360mA, 10V

Threshold Voltage :

4V

JESD-30 Code :

R-PDIP-T3

Element Configuration :

Single

Additional Feature :

AVALANCHE RATED

Vgs (Max) :

±20V

Mounting Type :

Through Hole

Power Dissipation :

1W

Operating Temperature :

-55°C~150°C TJ

Length :

5mm

Power Dissipation-Max :

1W Ta

Radiation Hardening :

No

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

140pF @ 25V

Factory Lead Time :

8 Weeks

Drain Current-Max (Abs) (ID) :

0.6A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

8.2nC @ 10V

Continuous Drain Current (ID) :

600mA

Number of Channels :

1

Current - Continuous Drain (Id) @ 25°C :

600mA Ta

Fall Time (Typ) :

17 ns

Number of Elements :

1

Rise Time :

17ns

Package / Case :

4-DIP (0.300, 7.62mm)

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

8.2 ns