IRFD210

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

JESD-30 Code :

R-PDIP-T3

Width :

6.29mm

Rds On (Max) @ Id, Vgs :

1.5 Ω @ 360mA, 10V

Case Connection :

DRAIN

Terminal Position :

Dual

REACH SVHC :

Unknown

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

140pF @ 25V

Mounting Type :

Through Hole

Current Rating :

600mA

Height :

3.37mm

Pbfree Code :

yes

Turn On Delay Time :

8.2 ns

Package / Case :

4-DIP (0.300, 7.62mm)

Drain to Source Breakdown Voltage :

200V

Additional Feature :

AVALANCHE RATED

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

1

FET Type :

N-Channel

Voltage - Rated DC :

200V

Length :

5mm

Number of Channels :

1

Mount :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

8.2nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

17 ns

Threshold Voltage :

4V

Current - Continuous Drain (Id) @ 25°C :

600mA Ta

Pin Count :

4

Continuous Drain Current (ID) :

600mA

Vgs(th) (Max) @ Id :

4V @ 250µA

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Packaging :

Tube

Element Configuration :

Single

Number of Pins :

4

Drain Current-Max (Abs) (ID) :

0.6A

Resistance :

1.5Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

4

Factory Lead Time :

8 Weeks

Rise Time :

17ns

Turn-Off Delay Time :

14 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

1W Ta

Power Dissipation :

1W

Vgs (Max) :

±20V

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Published :

2011

Operating Temperature :

-55°C~150°C TJ