IRFD123PBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~175°C TJ

Threshold Voltage :

2V

Configuration :

SINGLE WITH BUILT-IN DIODE

Mount :

Through Hole

Rise Time :

17ns

Rds On (Max) @ Id, Vgs :

270m Ω @ 780mA, 10V

Additional Feature :

AVALANCHE RATED

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Packaging :

Tube

REACH SVHC :

Unknown

Drain to Source Breakdown Voltage :

200V

Number of Pins :

4

Number of Elements :

1

Number of Terminations :

4

FET Type :

N-Channel

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

360pF @ 25V

Turn On Delay Time :

8.2 ns

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

600mA

Power Dissipation :

1W

Power Dissipation-Max :

1.3W Ta

Published :

2015

Turn-Off Delay Time :

14 ns

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

100V

Mounting Type :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

1.3A Ta

Fall Time (Typ) :

17 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

16nC @ 10V

Pin Count :

4

Gate to Source Voltage (Vgs) :

20V

Resistance :

270mOhm

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Dual

Vgs(th) (Max) @ Id :

4V @ 250µA

Factory Lead Time :

8 Weeks

Package / Case :

4-DIP (0.300, 7.62mm)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)