IRFD123

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Transistor Element Material :

SILICON

Surface Mount :

No

Gate Charge (Qg) (Max) @ Vgs :

16nC @ 10V

Package / Case :

4-DIP (0.300, 7.62mm)

Qualification Status :

COMMERCIAL

Vgs(th) (Max) @ Id :

4V @ 250µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

No

Drain-source On Resistance-Max :

0.4Ohm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

80V

Transistor Application :

SWITCHING

JESD-609 Code :

e0

JESD-30 Code :

R-PDIP-T3

Rds On (Max) @ Id, Vgs :

270m Ω @ 780mA, 10V

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Terminal Position :

Dual

Mounting Type :

Through Hole

FET Type :

N-Channel

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

1.3A Ta

Terminal Finish :

TIN LEAD

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

360pF @ 25V

RoHS Status :

Non-RoHS Compliant

Drain Current-Max (Abs) (ID) :

1.1A

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss) :

100V

Number of Terminations :

3