IRFD120PBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Number of Pins :

4

Number of Terminations :

4

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Threshold Voltage :

4V

Voltage - Rated DC :

100V

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

1.3A Ta

Mount :

Through Hole

Pin Count :

4

Case Connection :

DRAIN

Element Configuration :

Single

Rise Time :

27ns

Turn On Delay Time :

6.8 ns

Gate Charge (Qg) (Max) @ Vgs :

16nC @ 10V

Published :

2011

Pbfree Code :

yes

Operating Temperature :

-55°C~175°C TJ

Current Rating :

1.3A

Additional Feature :

AVALANCHE RATED

FET Type :

N-Channel

Length :

5mm

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

360pF @ 25V

Packaging :

Tube

Package / Case :

4-DIP (0.300, 7.62mm)

Power Dissipation-Max :

1.3W Ta

Rds On (Max) @ Id, Vgs :

270m Ω @ 780mA, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

1.3W

Recovery Time :

260 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Height :

3.37mm

Continuous Drain Current (ID) :

1.3A

Transistor Element Material :

SILICON

Width :

6.29mm

Factory Lead Time :

8 Weeks

Terminal Position :

Dual

ECCN Code :

EAR99

Turn-Off Delay Time :

18 ns

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

27 ns

Resistance :

270mOhm

Gate to Source Voltage (Vgs) :

20V

REACH SVHC :

Unknown

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Breakdown Voltage :

100V

Lead Free :

Lead Free