IRF7905PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Recovery Time :

15 ns

Power Dissipation :

2W

Current - Continuous Drain (Id) @ 25°C :

7.8A 8.9A

Rds On (Max) @ Id, Vgs :

21.8mOhm @ 7.8A, 10V

FET Type :

2 N-Channel (Dual)

Turn-Off Delay Time :

8.1 ns

Length :

4.9784mm

Rise Time :

9.3ns

Drain to Source Resistance :

21.3mOhm

Height :

1.4986mm

Current Rating :

7.8A

Operating Temperature :

-55°C~150°C TJ

Fall Time (Typ) :

3.4 ns

Vgs(th) (Max) @ Id :

2.25V @ 25μA

Drain to Source Breakdown Voltage :

30V

Gate Charge (Qg) (Max) @ Vgs :

6.9nC @ 4.5V

Number of Pins :

8

Number of Elements :

2

Threshold Voltage :

1.8V

Mount :

Surface Mount

Rds On Max :

21.8 mΩ

Power - Max :

2W

Max Operating Temperature :

150°C

Radiation Hardening :

No

Drain to Source Voltage (Vdss) :

30V

FET Feature :

Logic Level Gate

Resistance :

21.8MOhm

Width :

3.9878mm

Supplier Device Package :

8-SO

Voltage - Rated DC :

30V

Lead Free :

Lead Free

Input Capacitance :

600pF

Continuous Drain Current (ID) :

8.9A

Packaging :

Tube

Min Operating Temperature :

-55°C

Published :

2004

Gate to Source Voltage (Vgs) :

20V

Base Part Number :

IRF7905PBF

Series :

HEXFET®

Nominal Vgs :

1.8 V

Element Configuration :

Dual

Max Power Dissipation :

2W

Package / Case :

8-SOIC (0.154, 3.90mm Width)

RoHS Status :

RoHS Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

Input Capacitance (Ciss) (Max) @ Vds :

600pF @ 15V

Mounting Type :

Surface Mount