IRF7904TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain to Source Breakdown Voltage :

30V

Max Power Dissipation :

2W

Packaging :

Tape and Reel (TR)

Published :

2006

Series :

HEXFET®

Number of Pins :

8

Factory Lead Time :

12 Weeks

Continuous Drain Current (ID) :

11A

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Height :

1.4986mm

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No

ECCN Code :

EAR99

Resistance :

16.2MOhm

Vgs(th) (Max) @ Id :

2.25V @ 25μA

Number of Terminations :

8

Element Configuration :

Dual

Power - Max :

1.4W 2W

Base Part Number :

IRF7904PBF

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

2W

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 4.5V

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

7.6A 11A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

910pF @ 15V

Number of Elements :

2

Length :

4.9784mm

FET Feature :

Logic Level Gate

Contact Plating :

Tin

Transistor Element Material :

SILICON

Mount :

Surface Mount

Width :

3.9878mm

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

16.2m Ω @ 7.6A, 10V

Terminal Form :

Gull wing

FET Type :

2 N-Channel (Dual)

Lead Free :

Lead Free