IRF7807TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

66A

Rise Time :

17ns

Factory Lead Time :

12 Weeks

Number of Terminations :

8

Published :

2004

Power Dissipation-Max :

2.5W Ta

REACH SVHC :

No SVHC

Length :

4.9784mm

Vgs(th) (Max) @ Id :

1V @ 250μA

Width :

4.05mm

Mount :

Surface Mount

Vgs (Max) :

±12V

Series :

HEXFET®

Current - Continuous Drain (Id) @ 25°C :

8.3A Ta

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Lead Free :

Contains Lead, Lead Free

Drain to Source Breakdown Voltage :

30V

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

4.5V

Rds On (Max) @ Id, Vgs :

25m Ω @ 7A, 4.5V

Height :

1.75mm

Mounting Type :

Surface Mount

FET Type :

N-Channel

Max Junction Temperature (Tj) :

150°C

Row Spacing :

6.3 mm

Radiation Hardening :

No

Turn On Delay Time :

12 ns

Gate to Source Voltage (Vgs) :

12V

Termination :

SMD/SMT

Voltage - Rated DC :

30V

Nominal Vgs :

1 V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Continuous Drain Current (ID) :

8.3A

Dual Supply Voltage :

30V

Power Dissipation :

2.5W

Number of Pins :

8

Current Rating :

13A

Resistance :

25mOhm

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 5V

Transistor Element Material :

SILICON

Fall Time (Typ) :

6 ns

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Threshold Voltage :

1V

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Terminal Position :

Dual

Number of Channels :

1

Number of Elements :

1

Turn-Off Delay Time :

25 ns