IRF7769L2TRPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

20A

Packaging :

Tape and Reel (TR)

Factory Lead Time :

10 Weeks

Turn On Delay Time :

44 ns

Terminal Finish :

TIN SILVER COPPER

JESD-30 Code :

R-XBCC-N9

Avalanche Energy Rating (Eas) :

260 mJ

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

375A Tc

Drain-source On Resistance-Max :

0.0035Ohm

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

11

Vgs(th) (Max) @ Id :

4V @ 250µA

Rds On (Max) @ Id, Vgs :

3.5m Ω @ 74A, 10V

Time@Peak Reflow Temperature-Max (s) :

30

Transistor Application :

SWITCHING

Case Connection :

DRAIN

REACH SVHC :

No SVHC

Recovery Time :

112 ns

Rise Time :

32ns

JESD-609 Code :

e1

Input Capacitance (Ciss) (Max) @ Vds :

11560pF @ 25V

Fall Time (Typ) :

41 ns

Gate Charge (Qg) (Max) @ Vgs :

300nC @ 10V

Series :

HEXFET®

Nominal Vgs :

2.7 V

Power Dissipation :

3.3W

Operating Temperature :

-55°C~175°C TJ

Number of Terminations :

9

Number of Elements :

1

Peak Reflow Temperature (Cel) :

260

Drain to Source Breakdown Voltage :

100V

Turn-Off Delay Time :

92 ns

Pulsed Drain Current-Max (IDM) :

500A

Published :

2010

ECCN Code :

EAR99

Max Junction Temperature (Tj) :

175°C

Radiation Hardening :

No

Width :

7.112mm

Terminal Position :

BOTTOM

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Number of Channels :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

3.3W Ta 125W Tc

Mount :

Surface Mount

Drain Current-Max (Abs) (ID) :

395A

Length :

9.144mm

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Height :

676μm

Transistor Element Material :

SILICON

Package / Case :

DirectFET™ Isometric L8