IRF7756TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Series :

HEXFET®

Max Power Dissipation :

1W

Nominal Vgs :

-900 mV

Number of Pins :

8

Packaging :

Tape and Reel (TR)

Dual Supply Voltage :

-12V

Min Operating Temperature :

-55°C

Drain to Source Breakdown Voltage :

-12V

Rds On Max :

40 mΩ

Base Part Number :

IRF7756PBF

Published :

2009

Lead Free :

Lead Free

Max Operating Temperature :

150°C

Power - Max :

1W

Gate to Source Voltage (Vgs) :

8V

Input Capacitance (Ciss) (Max) @ Vds :

1400pF @ 10V

Supplier Device Package :

8-TSSOP

REACH SVHC :

No SVHC

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 4.5V

Package / Case :

8-TSSOP (0.173, 4.40mm Width)

Vgs(th) (Max) @ Id :

900mV @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

4.3A

Rds On (Max) @ Id, Vgs :

40mOhm @ 4.3A, 4.5V

Operating Temperature :

-55°C~150°C TJ

FET Type :

2 P-Channel (Dual)

RoHS Status :

RoHS Compliant

Drain to Source Resistance :

40mOhm

Power Dissipation :

1W

Mounting Type :

Surface Mount

FET Feature :

Logic Level Gate

Number of Elements :

2

Termination :

SMD/SMT

Element Configuration :

Dual

Mount :

Surface Mount

Input Capacitance :

1.4nF

Continuous Drain Current (ID) :

-4.3A

Drain to Source Voltage (Vdss) :

12V