IRF7607TRPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

HEXFET®

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 5V

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Current Rating :

6.5A

Turn On Delay Time :

8.5 ns

Turn-Off Delay Time :

36 ns

Number of Terminations :

8

Height :

860μm

Package / Case :

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Drain-source On Resistance-Max :

0.03Ohm

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Drain to Source Breakdown Voltage :

20V

Power Dissipation :

1.8W

Radiation Hardening :

No

Lead Free :

Contains Lead

Mount :

Surface Mount

Length :

3mm

Rds On (Max) @ Id, Vgs :

30m Ω @ 6.5A, 4.5V

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Additional Feature :

High Reliability

Number of Pins :

8

REACH SVHC :

No SVHC

Element Configuration :

Single

Power Dissipation-Max :

1.8W Ta

Published :

2001

Pulsed Drain Current-Max (IDM) :

50A

Mounting Type :

Surface Mount

Rise Time :

11ns

Vgs (Max) :

±12V

Factory Lead Time :

12 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

1310pF @ 15V

Current - Continuous Drain (Id) @ 25°C :

6.5A Ta

Voltage - Rated DC :

20V

Threshold Voltage :

1.2V

Fall Time (Typ) :

16 ns

Terminal Form :

Gull wing

Width :

3mm

Terminal Position :

Dual

Continuous Drain Current (ID) :

6.5A

Gate to Source Voltage (Vgs) :

12V

Packaging :

Tape and Reel (TR)