IRF7509TR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

JESD-609 Code :

e3

Terminal Position :

Dual

FET Feature :

Logic Level Gate

JESD-30 Code :

R-PDSO-G8

Drain-source On Resistance-Max :

0.11Ohm

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 10V

ECCN Code :

EAR99

RoHS Status :

Non-RoHS Compliant

Base Part Number :

IRF7509

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Qualification Status :

Not Qualified

Transistor Element Material :

SILICON

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Package / Case :

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Series :

HEXFET®

Surface Mount :

yes

Published :

1998

Number of Elements :

2

Drain to Source Voltage (Vdss) :

30V

Additional Feature :

LOGIC LEVEL COMPATIBLE

Drain Current-Max (Abs) (ID) :

2.7A

Input Capacitance (Ciss) (Max) @ Vds :

210pF @ 25V

Power - Max :

1.25W

Terminal Finish :

Matte Tin (Sn)

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Type :

N and P-Channel

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

30V

Current - Continuous Drain (Id) @ 25°C :

2.7A 2A

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

8

Rds On (Max) @ Id, Vgs :

110m Ω @ 1.4A, 10V

Pulsed Drain Current-Max (IDM) :

21A

Vgs(th) (Max) @ Id :

1V @ 250μA