IRF7507TR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Radiation Hardening :

No

Package / Case :

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

Packaging :

Tape and Reel (TR)

Max Power Dissipation :

1.25W

FET Type :

N and P-Channel

Rds On (Max) @ Id, Vgs :

140m Ω @ 1.7A, 4.5V

Factory Lead Time :

12 Weeks

Time@Peak Reflow Temperature-Max (s) :

40

Gate Charge (Qg) (Max) @ Vgs :

8nC @ 4.5V

Continuous Drain Current (ID) :

2.4A

ECCN Code :

EAR99

Number of Pins :

8

Power Dissipation :

1.25W

Current - Continuous Drain (Id) @ 25°C :

2.4A 1.7A

Additional Feature :

ULTRA LOW RESISTANCE

Terminal Position :

Dual

FET Feature :

Logic Level Gate

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

12V

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

JESD-609 Code :

e3

Turn-Off Delay Time :

38 ns

Nominal Vgs :

700 mV

Terminal Finish :

Matte Tin (Sn)

Threshold Voltage :

700mV

Height :

860μm

Vgs(th) (Max) @ Id :

700mV @ 250μA

Mounting Type :

Surface Mount

Mount :

Surface Mount

Series :

HEXFET®

Terminal Form :

Gull wing

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

260pF @ 15V

Resistance :

270mOhm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

2

Length :

3mm

Base Part Number :

IRF7507PBF

Drain to Source Breakdown Voltage :

20V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Width :

3mm

Number of Terminations :

8

Published :

1998

Pulsed Drain Current-Max (IDM) :

19A

Transistor Application :

SWITCHING

REACH SVHC :

No SVHC