IRF7473PBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Qualification Status :

Not Qualified

JESD-30 Code :

R-PDSO-G8

Time@Peak Reflow Temperature-Max (s) :

30

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

26m Ω @ 4.1A, 10V

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

61nC @ 10V

Surface Mount :

yes

ECCN Code :

EAR99

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

3180pF @ 25V

JESD-609 Code :

e3

Drain-source On Resistance-Max :

0.026ohm

Published :

2004

Peak Reflow Temperature (Cel) :

260

Terminal Finish :

Matte Tin (Sn)

Terminal Position :

Dual

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

6.9A

Drain to Source Voltage (Vdss) :

100V

Number of Terminations :

8

Packaging :

Tube

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

100V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Operating Temperature :

-55°C~150°C TJ

Series :

HEXFET®

JEDEC-95 Code :

MS-012AA

Avalanche Energy Rating (Eas) :

140 mJ

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

6.9A Ta

Pulsed Drain Current-Max (IDM) :

55A

Power Dissipation-Max :

2.5W Ta