IRF7420PBF
- Mfr.Part #
- IRF7420PBF
- Manufacturer
- International Rectifier
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CH 12V 11.5A 8SO
- Stock
- 3,732
- In Stock :
- 3,732
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.8V 4.5V
- Lead Free :
- Lead Free
- Mounting Type :
- Surface Mount
- Threshold Voltage :
- -900mV
- Width :
- 3.9878mm
- Power Dissipation-Max :
- 2.5W Ta
- Gate Charge (Qg) (Max) @ Vgs :
- 38nC @ 4.5V
- FET Type :
- P-Channel
- Mount :
- Surface Mount
- Radiation Hardening :
- No
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Continuous Drain Current (ID) :
- -11.5A
- Drain to Source Breakdown Voltage :
- -12V
- Packaging :
- Tube
- Drain to Source Voltage (Vdss) :
- 12V
- Power Dissipation :
- 2.5W
- Published :
- 2004
- Turn-Off Delay Time :
- 291 ns
- Element Configuration :
- Single
- Rise Time :
- 8.8ns
- Number of Pins :
- 8
- Operating Temperature :
- -55°C~150°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 3529pF @ 10V
- Current Rating :
- -11.5A
- Height :
- 1.4986mm
- Rds On (Max) @ Id, Vgs :
- 14m Ω @ 11.5A, 4.5V
- Turn On Delay Time :
- 8.8 ns
- Vgs(th) (Max) @ Id :
- 900mV @ 250μA
- REACH SVHC :
- No SVHC
- Voltage - Rated DC :
- -12V
- Series :
- HEXFET®
- Nominal Vgs :
- -900 mV
- Contact Plating :
- Tin
- Gate to Source Voltage (Vgs) :
- 8V
- Number of Elements :
- 1
- Fall Time (Typ) :
- 225 ns
- Vgs (Max) :
- ±8V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 11.5A Tc
- RoHS Status :
- ROHS3 Compliant
- Length :
- 4.9784mm
- Dual Supply Voltage :
- -12V
- Resistance :
- 14mOhm
- Datasheets
- IRF7420PBF

P-Channel Tube 14m Ω @ 11.5A, 4.5V ±8V 3529pF @ 10V 38nC @ 4.5V 12V 8-SOIC (0.154, 3.90mm Width)
IRF7420PBF Description
The exceptionally low on-resistance per silicon area of these P-Channel HEXFET Power MOSFETs from International Rectifier is made possible by cutting-edge manufacturing procedures. This advantage gives the designer access to a highly effective tool for use in load and battery management applications.
The SO-8 has been altered by way of a unique leadframe, resulting in improved thermal properties and multiple-die capabilities, making it perfect for a range of power applications. These upgrades allow for the usage of many devices while drastically reducing board space in an application. The container is made for wave, infrared, or vapor phase soldering.
IRF7420PBF Features
-
Ultra Low On-Resistance
-
P-Channel MOSFET
-
Surface Mount
-
Available in Tape & Reel
-
Lead-Free
IRF7420PBF Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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