IRF7413TRPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

3V @ 250µA

Gate to Source Voltage (Vgs) :

20V

Rise Time :

50ns

JESD-609 Code :

e3

Terminal Finish :

Matte Tin (Sn)

Height :

1.75mm

Element Configuration :

Single

Turn On Delay Time :

8.6 ns

Lead Free :

Contains Lead, Lead Free

Width :

3.9878mm

Turn-Off Delay Time :

52 ns

Number of Pins :

8

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

REACH SVHC :

No SVHC

Series :

HEXFET®

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Channels :

1

Length :

4.9784mm

Number of Elements :

1

Drain to Source Breakdown Voltage :

30V

Terminal Position :

Dual

Avalanche Energy Rating (Eas) :

260 mJ

Nominal Vgs :

3 V

Mount :

Surface Mount

Current Rating :

13A

Published :

2007

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Voltage - Rated DC :

30V

Peak Reflow Temperature (Cel) :

260

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Gate Charge (Qg) (Max) @ Vgs :

79nC @ 10V

Rds On (Max) @ Id, Vgs :

11m Ω @ 7.3A, 10V

Row Spacing :

6.3 mm

Time@Peak Reflow Temperature-Max (s) :

30

Recovery Time :

110 ns

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Dual Supply Voltage :

30V

Transistor Element Material :

SILICON

Additional Feature :

ULTRA LOW RESISTANCE

FET Type :

N-Channel

Power Dissipation :

2.5W

Fall Time (Typ) :

46 ns

Power Dissipation-Max :

2.5W Ta

Max Junction Temperature (Tj) :

150°C

Transistor Application :

SWITCHING

Resistance :

11mOhm

Current - Continuous Drain (Id) @ 25°C :

13A Ta

Factory Lead Time :

12 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

1800pF @ 25V

Continuous Drain Current (ID) :

13A

Threshold Voltage :

3V

Number of Terminations :

8

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±20V