IRF7404TRPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Voltage - Rated DC :

-20V

Additional Feature :

LOGIC LEVEL COMPATIBLE

Fall Time (Typ) :

65 ns

Drain to Source Voltage (Vdss) :

20V

Row Spacing :

6.3 mm

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Resistance :

40mOhm

Peak Reflow Temperature (Cel) :

260

Gate to Source Voltage (Vgs) :

12V

Height :

1.4986mm

Threshold Voltage :

-700mV

Recovery Time :

100 ns

Power Dissipation :

2.5W

Turn On Delay Time :

14 ns

Operating Temperature :

-55°C~150°C TJ

REACH SVHC :

No SVHC

Vgs (Max) :

±12V

Packaging :

Tape and Reel (TR)

Drain to Source Breakdown Voltage :

-20V

Published :

2004

Transistor Element Material :

SILICON

Factory Lead Time :

12 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

2.7V 4.5V

Terminal Form :

Gull wing

Terminal Position :

Dual

Length :

4.9784mm

FET Type :

P-Channel

Number of Elements :

1

Continuous Drain Current (ID) :

-6.7A

Number of Pins :

8

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

30

Dual Supply Voltage :

-20V

Nominal Vgs :

-700 mV

Element Configuration :

Single

Current Rating :

-6.7A

Series :

HEXFET®

Input Capacitance (Ciss) (Max) @ Vds :

1500pF @ 15V

Drain Current-Max (Abs) (ID) :

5.3A

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

40m Ω @ 3.2A, 4.5V

Rise Time :

32ns

Turn-Off Delay Time :

100 ns

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 4.5V

Contact Plating :

Tin

Number of Terminations :

8

Power Dissipation-Max :

2.5W Ta

Radiation Hardening :

No

Width :

3.9878mm

Current - Continuous Drain (Id) @ 25°C :

6.7A Ta

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

700mV @ 250μA

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant