IRF7331

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Transistor Element Material :

SILICON

FET Type :

2 N-Channel (Dual)

JESD-30 Code :

R-PDSO-G8

Power - Max :

2W

Rds On (Max) @ Id, Vgs :

30m Ω @ 7A, 4.5V

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 4.5V

JEDEC-95 Code :

MS-012AA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Finish :

NOT SPECIFIED

Packaging :

Tube

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

7A

RoHS Status :

Non-RoHS Compliant

Number of Elements :

2

Surface Mount :

yes

Series :

HEXFET®

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

20V

Mounting Type :

Surface Mount

FET Feature :

Logic Level Gate

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds :

1340pF @ 16V

Published :

2007

Transistor Application :

SWITCHING

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Number of Terminations :

8

Package / Case :

8-SOIC (0.154, 3.90mm Width)